Grain Growth in Aluminum Metallization Lines
Aluminum metallization layers are used on many semiconducting devices. In this
project, aluminum lines approximately 2 microns wide will be laid down on a
silicon oxide substrate using the facilities in the
Thayer Microengineering
Laboratory.
The structure of the films in as-deposited condition and after various
heat treatments will be examined using scanning electron microscopy. A
good project will determine the evolution of the microstructure as a
function of time at a particular annealing temperature. The
structure and rate of grain growth in the lines produced
from Al-4 wt.% Cu and Al-1 wt. % Si could also be studied and
compared to grain growth in pure aluminum.
Christopher.G.Levey@dartmouth.edu