Quantum Wells & Optical Properties
02800563 INSPEC Abstract Number: A87007343, B87006412
Title: A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
Author(s): Esaki, L.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: IEEE Journal of Quantum Electronics vol.QE-22, no.9 p.
1611-24
Publication Date: Sept. 1986 Country of Publication: USA
Abstract: Significant milestones during the past 17-year developmental
path in research on semiconductor superlattices and quantum wells are
presented. Emphasis is placed on experimental investigations in the device
physics of reduced dimensionality and the materials science of
heteroepitaxial growth. (196 Refs)
03134750 INSPEC Abstract Number: A88068789
Title: Optical spectroscopy of excitons in quantum wells
Author(s): Esaki, L.; Vina, L.; Mendez, E.E.; Chang, L.L.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Journal of Luminescence vol.40-41 p.12-16
Publication Date: Feb. 1988 Country of Publication: Netherlands
Conference Title: International Conference on Luminescence - Excited
State Processes in Condensed Matter
Conference Sponsor: Beijing Chem. Works; Beijing Gen. Res. Inst.
Nonferrous Metals; Beijing Normal Univ.; et al
Conference Date: 17-21 Aug. 1987 Conference Location: Beijing, China
Language: English Document Type: Conference Paper (PA); Journal Paper
(JP)
Abstract: The main aspects of electric-field effects on excitons in
GaAs-GaAlAs quantum wells by spectroscopic studies are presented, including
thickness dependence and coupling between excitonic states. (18 Refs)
00696530 INSPEC Abstract Number: A74079407
Title: Quantum states of confined carriers in very thin Al/sub x/Ga/sub
1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As heterostructures
Author(s): Dingle, R.; Wiegmann, W.; Henry, C.H.
Author Affiliation: Bell Labs., Murray Hill, NJ, USA
Journal: Physical Review Letters vol.33, no.14 p.827-30
Publication Date: 30 Sept. 1974 Country of Publication: USA
CODEN: PRLTAO ISSN: 0031-9007
Language: English Document Type: Journal Paper (JP)
Treatment: Theoretical (T); Experimental (X)
Abstract: From observations of the absorption spectra of thin GaAs layers
( approximately 70-500AA) deposited between Al/sub x/Ga/sub 1-x/As crystals
bound carrier states are investigated. The spectra in the band-edge region
of GaAs indicate that the structure behaves as if it has two rectangular
potential wells, one trapping electrons and the other holes. The depths of
these wells related to the difference in semiconductor band gaps is found.
(10 Refs)
(the classic first optical work)
Title: Linear and nonlinear optical properties of semiconductor quantum
wells
Author(s): Schmitt-Rink, S.; Chemla, D.S.; Miller, D.A.B.
Author Affiliation: AT&T Bell Labs., Murray Hill, NJ, USA
Journal: Advances in Physics vol.38, no.2 p.89-188
Publication Date: March-April 1989 Country of Publication: UK
Abstract: The authors review the experimental and theoretical
investigations of the linear and nonlinear optical properties of
semiconductor quantum well structures, including the effects of
electrostatic fields, extrinsic carriers and real or virtual photocarriers.
(338 Refs)
02523262 INSPEC Abstract Number: A85106484
Title: Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
Author(s): Chemla, D.S.; Miller, D.A.B.
Author Affiliation: AT&T Bell Labs., Holmdel, NJ, USA
Journal: Journal of the Optical Society of America B (Optical Physics)
vol.2, no.7 p.1155-73
Publication Date: July 1985 Country of Publication: USA
Abstract: The authors review the nonlinear-optical effects observed at
room temperature in semiconductor quantum-well structures photoexcited near
the band gap. A comprehensive discussion of optical transitions in these
microstructures is given, including excitonic effects and the specific
features of room-temperature exciton resonances. Experimental
investigations using continuous-wave, picosecond-, and femtosecond-laser
sources are presented. They show extremely efficient nonlinear processes.
In the case of excitations that are long compared with the
exciton-ionization time, the induced changes in absorption and refraction
do not depend on the wavelength or on the duration of excitation. These
changes depend only on the density of absorbed photons and are interpreted
in terms of electron-hole plasma screening and band filling. In contrast,
for ultrashort excitation, nonlinear processes depend critically on the
excitation wavelength. The selective generation of excitons is found to
produce effects larger than a plasma of the same density. This unexpected
result is shown to arise from the low temperature of the exciton gas before
it interacts with the lattice and from the decrease of screening that is
the reduced dimensionality of quantum-well structures. (77 Refs)
03113174 INSPEC Abstract Number: A88042988, B88027165
Title: The physics of the quantum well laser
Author(s): Weisbuch, C.; Nagle, J.
Author Affiliation: Lab. Central de Recherches, Thomson-CSF, Orsay,
France
Journal: Physica Scripta Volume T vol.T19A p.209-14
Publication Date: 1987 Country of Publication: Sweden
Conference Title: 7th General Conference of the Condensed Matter Division
of the European Physical Society
Conference Sponsor: Ansaldo; Univ. Pisa; Consiglio Nazionale Richerche;
et al
Conference Date: 7-10 April 1987 Conference Location: Pisa, Italy
Abstract: The authors review some of the properties of quantum well laser
(QWLs), with emphasis on the two-dimensional origins of these. It is shown
that two main effects determine the lowering of threshold current, namely
the diminished density of states (DOS) (favourable factor) and the
diminished optical confinement (unfavorable factor). The good operation of
GaAs-GaAlAs QWLs also relies on more subtle effects such as the square 2D
DOS, the enhanced optical matrix element, the high quantum efficiency . . .
The poor operation of GaInAs based quantum well lasers is due to the
detrimental Auger effect which is larger than in 3D lasers because of the
higher carrier densities at which QWLs operate. Several other useful
properties of QWLs in the performance (high-frequency, narrow-line) and
manufacturing fields are discussed. Problems and advantages of 1 and 0D
quantum-wire and quantum-box lasers are briefly evaluated. (34 Refs)
Title: Femtosecond dynamics of excitons under extreme magnetic confinement
Author(s): Stark, J.B.; Knox, W.H.; Chemla, D.S.; Schafer, W.;
Schmitt-Rink, S.; Stafford, C.
Author Affiliation: AT&T Bell Labs., Holmdel, NJ, USA
Journal: Physical Review Letters vol.65, no.24 p.3033-6
Publication Date: 10 Dec. 1990 Country of Publication: USA
Abstract: The resonant optical nonlinearities of GaAs/AlGaAs quantum
wells are measured with femtosecond time resolution, as the
quasi-two-dimensional states are further confined into quasizero dimensions
by a perpendicular magnetic field. The authors apply fields up to 12 T to
demonstrate that exciton-exciton Coulomb interactions are strongly modified
by quasi-zero-dimensional confinement, in agreement with many-body theory.
These measurements demonstrate for the first time the remarkable result
that at high magnetic fields an ensemble of 1 s electron-hole pairs behaves
like a gas of noninteracting particles. (10 Refs)
03634837 INSPEC Abstract Number: A90075351, B90036219
Title: Theory of semiconductor superlattice electronic structure
Author(s): Smith, D.L.; Mailhiot, C.
Author Affiliation: Los Alamos Nat. Lab., NM, USA
Journal: Reviews of Modern Physics vol.62, no.1 p.173-234
Publication Date: Jan. 1990 Country of Publication: USA
CODEN: RMPHAT ISSN: 0034-6861
Language: English Document Type: Journal Paper (JP)
Treatment: Bibliography (B); General, Review (G); Theoretical (T)
Abstract: The authors review the theory of semiconductor superlattice
electronic structure. First a survey of theoretical methods is presented.
These methods can be divided into two general classes: the supercell
approach in which the superlattice is viewed as a material with a large
unit cell, and the boundary-condition approach in which bulk wave functions
in the constituent semiconductors are matched at the superlattice
interfaces. Supercell approaches are essentially the same as conventional
band-structure methods. They can only be applied to thin-layer
superlattices because of numerical cost. The authors discuss problems of
interface matching that occur in various boundary-condition methods and
relate these methods to each other. A particular boundary-condition method
is used to discuss the electronic structure of various III-V semiconductor
superlattices. Emphasis is placed on discussing the qualitatively different
behavior that can arise because of different energy-band lineups, strain
conditions, and growth orientations. The authors compare the results of
three commonly used boundary-condition methods and find generally good
agreement. (209 Refs)
Wires and Dots
Title: Optical properties of III-V semiconductor quantum wires and dots
Author(s): Kash, K.
Author Affiliation: Bellcore, Red Bank, NJ, USA
Journal: Journal of Luminescence vol.46, no.2 p.69-82
Publication Date: March 1990 Country of Publication: Netherlands
Abstract: The author reviews the brief history and present status of
research on the optical properties of III-V semiconductor quantum wires and
dots. These efforts are driven in part by predictions of interesting linear
and nonlinear optical properties for these structures. Experimental work
has focused on various schemes to make uniform arrays of structures. New
techniques developed for making these arrays have been followed by the
observation of large zero-point energies and subband splittings for
electrons, and modified exciton binding energies and selection rules for
optical transitions in quantum wires. (94 Refs)
03136689 INSPEC Abstract Number: A88069106
Title: Observation of discrete electronic states in a zero-dimensional
semiconductor nanostructure
Author(s): Reed, M.A.; Randall, J.N.; Aggarwal, R.J.; Matyi, R.J.; Moore,
T.M.; Wetsel, A.E.
Author Affiliation: Central Res. Labs., Texas Instruments Inc., Dallas,
TX, USA
Journal: Physical Review Letters vol.60, no.6 p.535-7
Publication Date: 8 Feb. 1988 Country of Publication: USA
Abstract: Electronic transport through a three-dimensionally confined
semiconductor quantum well ('quantum dot') has been investigated. Fine
structure observed in resonant tunneling through the quantum dot
corresponds to the discrete density of states of a zero-dimensional system.
(18 Refs)
02448116 INSPEC Abstract Number: A85058028
Title: Relativistic one-dimensional hydrogen atom
Author(s): Spector, H.N.; Lee, J.
Author Affiliation: GTE Labs., Waltham, MA, USA
Journal: American Journal of Physics vol.53, no.3 p.248-51
Publication Date: March 1985 Country of Publication: USA
Abstract: The problem of the one-dimensional hydrogen atom has evoked
interest because of its relevance to the behavior of hydrogeniclike atoms
in the presence of strong magnetic fields and of hydrogenic impurities
confined in quantum-well wire structures. The binding energy of the
one-dimensional nonrelativistic hydrogen atom has been found to be infinite
in its ground state. The authors solved the relativistic hydrogen atom
problem for the one-dimensional case using the Klein-Gordon equation. They
find that the binding energy in the ground state for the one-dimensional
relativistic hydrogen atom is finite and is of order of the rest mass
energy of the electron. Therefore a relativistic treatment removes the
infinite binding energy found for the ground state for the one-dimensional
nonrelativistic hydrogen atom. (29 Refs)
03565159 INSPEC Abstract Number: A90035025
Title: One-dimensional magnetoexcitons in GaAs/Al/sub x/Ga/sub 1-x/As
quantum wires
Author(s): Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.
Author Affiliation: Max-Planck-Inst. fur Festkorperforschung, Stuttgart,
West Germany
Journal: Physical Review Letters vol.63, no.19 p.2124-7
Publication Date: 6 Nov. 1989 Country of Publication: USA
Abstract: GaAs/Al/sub x/Ga/sub 1-x/As quantum-well wires with lateral
dimensions of 70 nm have been prepared by mesa etching of 14-nm-wide
quantum-well systems. In photoluminescence excitation two heavy-hole
exciton transitions, hh/sub 11/ and hh/sub 12/, separated by 2.5 meV, were
observed. These transitions result from 1D quantum-confined energy states
in the narrow wires. The 1D character was reflected in a strong
polarization dependence and in a unique magnetic field behavior indicating
an enhancement of the excitonic interaction of the 1D ground state by about
15%. (18 Refs)
Nanostructures and Transport
03474277 INSPEC Abstract Number: A89128438, B89068680
Title: Physics of microstructures
Author(s): Movaghar, B.
Author Affiliation: GEC Hirst Res. Centre, Wembley, UK
Journal: Canadian Journal of Physics vol.67, no.4 p.304-10
Publication Date: April 1989 Country of Publication: Canada
U.S. Copyright Clearance Center Code: 0008-4204/89/$3.00+0.00
Conference Title: Fourth Canadian Semiconductor Technology Conference
Conference Date: Aug. 1988 Conference Location: Ottawa, Ont., Canada
Abstract: A brief review is presented of the novel physics associated
with submicrometre structures produced by molecular beam epitaxy and
electron beam lithography. In low-temperature transport, the most important
effect is the achievement of extraordinary long coherence lengths (10 mu m)
or high mobilities for carriers moving in two dimensions and constructed
topologies. Ballistic motion, fractional quantum Hall effect, and
Bohm-Aharonov interference are direct consequences. When barriers are
present in multiple quantum well and superlattice structures, there is
resonant tunnelling, Stark localization, and magneto-Stark transport. In
optics, the main novelty is the consequence of the quantum well
confinement, giving rise to sharp inter-subband transitions and excitonic
effects. The strongly wavelength-dependent absorption can be of
considerable importance in photodiodes, wavelength demultiplexers, and
infrared detectors. (18 Refs)
03521824 INSPEC Abstract Number: A90008802, B90001240
Title: Electronic transport in low-dimensional structures
Author(s): Harris, J.J.; Pals, J.A.; Woltjer, R.
Author Affiliation: Philips Res. Labs., Redhill, UK
Journal: Reports on Progress in Physics vol.52, no.10 p.1217-66
Publication Date: Oct. 1989 Country of Publication: UK
Abstract: Reviews the transport properties of electrons in semiconductor
heterojunction structures, in which the degrees of freedom for motion of
the charge carriers are reduced by confining potentials, thereby producing
low- (i.e. two-, one- or even zero-) dimensional electronic structures. A
theoretical treatment of quantisation effects due to two-dimensional (2D)
and one-dimensional (1D) confinement, with and without an applied magnetic
field, will be given, and used to interpret a range of experimental results
obtained from GaAs/Al/sub x/Ga/sub 1-x/As 2D and 1D heterojunction
structures. For 2D samples, these results cover low-field mobility
measurements, which give information on the scattering mechanisms present,
and high-field magnetotransport studies, including the quantum Hall effect
and parallel conduction processes. In 1D structures, quantum and ballistic
transport processes will be discussed. (244 Refs)
00139209 INSPEC Abstract Number: A70037456, B70021028
Title: Superlattice and negative differential conductivity in
semiconductors
Author(s): Esaki, L.; Tsu, R.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: IBM Journal of Research and Development vol.14, no.1 p.
61-5
Publication Date: Jan. 1970 Country of Publication: USA
Abstract: The authors consider a one-dimensional periodic potential, or
superlattice, in monocrystalline semiconductors formed by a periodic
variation of alloy composition or of impurity density introduced during
epitaxial growth. If the period of a superlattice, of the order of 100AA,
is shorter than the electron mean free path, a series of narrow allowed and
forbidden bands is expected owing to the subdivision of the Brillouin zone
into a series of minizones. If the scattering time of electrons meets a
threshold condition, the combined effect of the narrow energy band and the
narrow wave-vector zone makes it possible for electrons to be excited with
moderate electric fields to an energy and momentum beyond an inflection
point in the E-k relation; this results in a negative differential
conductance in the direction of the superlattice.
(an original classic but must be ILLd--not at Dartmouth)
XXBB Rev. Mod. Phys., Vol. 60, No. 4, October 1988
Pages 873 - 916
XXTT Adiabatic quantum transport in multiply connected systems
XXAU J. E. Avron
XXLO Department of Physics, Technion, Haifa 32000, Israel
XXLO Division of
Physics, Mathematics, and Astronomy, California Institute of Technology,
Pasadena, California 91125
XXAU A. Raveh
XXAU B. Zur
XXLO Department of Physics, Technion, Haifa 32000, Israel
XXDA #TP T #YR 88 #XN 0365Db #XN 0560+w #XN 7210-d
XXJN #56 IL #80 10 #81 WAVE FUNCTIONS; ADIABATIC PROCESSES; HAMILTONIANS;
TOPOLOGY; QUANTUM MECHANICS :T1; QUANTUM OPERATORS; KUBO FORMULA; QUANTUM HALL
EFFECT; TRANSPORT PROCESSES :Q1; NETWORK ANALYSIS;
XXAB The adiabatic quantum transport in multiply connected systems is examined.
The systems considered have several holes, usually three or more, threaded by
independent flux tubes, the transport properties of which are described by
matrix-valued functions of the fluxes. The main theme is the
differential-geometric interpretation of Kubo's formulas as curvatures. Because
of this interpretation, and because flux space can be identified with the
multitorus, the adiabatic conductances have topological significance, related
to the first Chern character. In particular, they have quantized averages. The
authors describe various classes of quantum Hamiltonians that describe multiply
connected systems and investigate their basic properties. They concentrate on
models that reduce to the study of finite-dimensional matrices. In particular,
the reduction of the ``free-electron'' Schrodinger operator, on a network of
thin wires, to a matrix problem is described in detail. The authors define
``loop currents'' and investigate their properties and their dependence on the
choice of flux tubes. They introduce a method of topological classification of
networks according to their transport. This leads to the analysis of level
crossings and to the association of ``charges'' with crossing points. Networks
made with three equilateral triangles are investigated and classified, both
numerically and analytically. Many of these networks turn out to have
nontrivial topological transport properties for both the free-electron and the
tight-binding models. The authors conclude with some open problems and
questions.
03923127 INSPEC Abstract Number: A91092749
Title: Ballistic and adiabatic electron transport in 1 and 2 dimensions
Author(s): Beenakker, C.W.J.
Author Affiliation: Philips Res. Labs., Eindhoven, Netherlands
Journal: Physica B vol.169 p.355
Publication Date: Feb. 1991 Country of Publication: Netherlands
Conference Title: Proceedings of the 19th International Conference on Low
Temperature Physics
Conference Date: 16-22 Aug. 1990 Conference Location: Brighton, UK
Abstract: An overview is given of the work of the Philips/Delft
collaboration on low-temperature electrical conduction through
nanostructures in a two-dimensional electron gas, with an emphasis on the
present theoretical understanding of the phenomena observed. The central
vehicle for the investigation is the quantum point contact, which is a
constriction of variable width comparable to the Fermi wavelength. Two
transport regimes are distinguished: Ballistic transport at zero or weak
magnetic fields, and adiabatic transport in strong magnetic fields. Major
topics are: (i) conductance quantisation: (ii) coherent electron focusing;
(iii) electron beam collimation; (iv) electron billiards; (v) edge channels
in the integer and fractional quantum Hall effect. (0 Refs)
03314787 INSPEC Abstract Number: A89030890
Title: Absence of backscattering in the quantum Hall effect in multiprobe
conductors
Author(s): Buttiker, M.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Physical Review B (Condensed Matter) vol.38, no.14 p.
9375-89
Publication Date: 15 Nov. 1988 Country of Publication: USA
Abstract: Under certain conditions, high magnetic fields in a
two-dimensional conductor lead to a suppression of both elastic and
inelastic backscattering. This, together with the formation of edge states,
is used to develop a picture of the integer quantum Hall effect in open
multiprobe conductors. The authors consider both ideal contacts without
elastic scattering and also disordered contacts. Ideal contacts populate
edge states equally whereas disordered contacts lead to an initial
nonequilibrium population of the edge states. In Hall samples much larger
than an inelastic length, and in the presence of disordered contacts, the
sample edges become equipotential lines only an inelastic scattering length
away from the current source and current drain contacts. Samples so small
that the carriers can travel from one contact to the other without
inelastic relaxation do not exhibit exact quantization if the contacts are
disordered. In all cases they find that the quantum Hall effect occurs only
if the sample exhibits at least two sets of equilibrated edge states which
do not interact via elastic or inelastic scattering. The onset of
interaction between the two sets of edge states leads to deviations from
exact quantization and eventually to a breakdown of the quantum Hall
effect. (58 Refs)
03348318 INSPEC Abstract Number: A89048880
Title: Negative resistance fluctuations at resistance minima in narrow
quantum Hall conductors
Author(s): Buttiker, M.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Physical Review B (Condensed Matter) vol.38, no.17 p.
12724-7
Publication Date: 15 Dec. 1988 Country of Publication: USA
Abstract: Negative resistances are a signature of four-terminal
resistance measurements. The author constructs a simple model of a
localized impurity state in a four-probe conductor. A recently proposed
multiprobe resistance formula is combined with the multichannel
Breit-Wigner formalism to describe tunneling between edge states via the
localized state. Deviations from the quantized Hall resistance are
discussed and the symmetry with regard to magnetic field reversal is
investigated. The model permits negative longitudinal resistance
fluctuations which have been observed in recent experiments. (17 Refs)
03437093 INSPEC Abstract Number: A89101680
Title: Influence of geometry on the Hall effect in ballistic wires
Author(s): Ford, C.J.B.; Washburn, S.; Buttiker, M.; Knoedler, C.M.;
Hong, J.M.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Physical Review Letters vol.62, no.23 p.2724-7
Publication Date: 5 June 1989 Country of Publication: USA
Abstract: The authors present a systematic investigation of the influence
of cross geometry on the Hall effect in narrow ballistic wires. Various
differently shaped cross regions have been fabricated, which demonstrate
that near zero magnetic field the Hall resistance can be quenched, enhanced
over its classical value, or even negative. A 'last plateau' is seen in all
devices, proving that its cause is not intimately linked to the quenching.
A simple physical picture is presented showing how these effects come about
from the scattering of electrons in such geometries. (16 Refs)
03829770 INSPEC Abstract Number: A91036614
Title: Scattering theory of thermal and excess noise in open conductors
Author(s): Buttiker, M.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Physical Review Letters vol.65, no.23 p.2901-4
Publication Date: 3 Dec. 1990 Country of Publication: USA
Abstract: Thermal fluctuations at equilibrium and excess fluctuations in
the presence of transport in open multiprobe conductors are related to the
scattering matrix of the conductor. The fluctuation-dissipation theorem for
multiprobe conductors is discussed. A general expression for the excess
noise in the presence of transport is derived. These results are applied to
conductors which exhibit the quantized Hall effect. If backscattering is
suppressed, excess noise is also suppressed. (16 Refs)
03366153 INSPEC Abstract Number: A89061581
Title: Skipping orbits, traversing trajectories, and quantum ballistic
transport in microstructures
Author(s): Beenakker, C.W.J.; van Houten, H.; van Wees, B.J.
Author Affiliation: Philips Res. Labs., Eindhoven, Netherlands
Journal: Superlattices and Microstructures vol.5, no.1 p.127-32
Publication Date: 1989 Country of Publication: UK
U.S. Copyright Clearance Center Code: 0749-6036/89/010127+06$02.00
Conference Title: Fourth International Conference on Superlattices,
Microstructures and Microdevices
Conference Date: 8-12 Aug. 1988 Conference Location: Trieste, Italy
Abstract: Three topics of current interest in the study of quantum
ballistic transport in a two-dimensional electron gas are discussed, with
an emphasis on correspondences between classical trajectories and quantum
states in the various experimental geometries. The authors consider the
quantized conductance of point contacts, the quenching of the Hall effect
in narrow channels, and coherent electron focusing in a double-point
contact geometry. (23 Refs)
Title: Aharonov-Bohm effect in normal metal. Quantum coherence and
transport
Author(s): Washburn, S.; Webb, R.A.
Author Affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights,
NY, USA
Journal: Advances in Physics vol.35, no.4 p.375-422
Publication Date: July-Aug. 1986 Country of Publication: UK
Experimental (X)
Abstract: Reviews some of the recent surprising theoretical and
experimental results obtained on the transport properties of small
disordered metal samples. Even in the presence of disorder, the quantum
mechanical interference of electron wavefunctions can still be observed.
The Aharonov-Bohm effect is a particularly clear demonstration of this. In
doubly connected structures (such as loops of wire) threaded by a magnetic
flux, the electrical conductance oscillates because of the Aharonov-Bohm
effect. In fact, because the electron trajectories are diffusive (i.e.
random walks), even a lone wire (a singly connected structure) will exhibit
a random pattern of conductance fluctuations as a function of the magnetic
field because of the same interference effects. All that is required for
the observation of these interferences is that the electrons retain 'phase
memory' during the period of transit through the sample. The length over
which memory is maintained (the phase coherence length) can be much larger
than the random walk step length (the mean free path). The authors focus
mainly on effects observed in the limit where the phase coherence length of
the electrons is comparable to or larger than the sample size. They explain
how the interferences are averaged as the system size grows larger than the
phase coherence length. They also remark on surprising aspects of the
fluctuations such as those resulting from the non-local character of the
wavefunction; some of the results are forbidden classically. (152 Refs)
02869331 INSPEC Abstract Number: A87052640
Title: Quantum transport theory for small-geometry structures
Author(s): Barker, J.R.
Author Affiliation: Dept. of Electron., Glasgow Univ., UK
Conference Title: Physics and Fabrication of Microstructures and
Microdevices. Proceedings of the Winter School p.210-30
Editor(s): Kelly, M.J.; Weisbuch, C.
Publisher: Springer-Verlag, Berlin, West Germany
Publication Date: 1986 Country of Publication: West Germany xi+469
pp.
Language: English Document Type: Conference Paper (PA)
Treatment: Theoretical (T)
Abstract: Presents an elementary introduction to quantum transport and
tunnelling in very small structures. The emphasis is on quantum ballistic
systems for which collision processes are less significant than the free
carrier motion in the strongly inhomogeneous (and possibly quantising)
potential fields provided by the device structure. Quantum ballistic
transport occurs when the carrier transit time is substantially shorter
than the mean free time for inelastic collisions. Effects which may arise
include size quantisation, localisation phenomena, low-dimensional effects,
tunnelling and resonance phenomena. (47 Refs)
(not at Dartmouth)
03505612 INSPEC Abstract Number: A89142419
Title: Universal conductance fluctuations and quantum interference effects
in microstructures
Author(s): Stone, A.D.
Author Affiliation: Appl. Phys. Labs., Yale Univ., New Haven, CT, USA
Conference Title: Physics and Technology of Submicron Structures.
Proceedings of the Fifth International Winter School p.108-27
Editor(s): Heinrich, H.; Bauer, G.; Kuchar, F.
Publisher: Springer-Verlag, Berlin, West Germany
Publication Date: 1988 Country of Publication: West Germany ix+287
pp.
ISBN: 3 540 19109 7
Conference Date: 22-26 Feb. 1988 Conference Location: Mauterndorf,
Austria
Abstract: The low-temperature conducting properties of microstructures
are observed to vary in a random manner as a function of magnetic field or
carrier density. These fluctuations are sample-specific, but
time-independent and reproducible within a given sample. It is now
understood that these fluctuations result from random quantum interference
of diffusing electrons. The author reviews the recently-developed theory of
these novel fluctuation phenomena, which predict that the order of
magnitude of the absolute fluctuations in the conductance of any metallic
system is e/sup 2//h, as long as the conductor is probed on length scales
of the order of the inelastic diffusion length. Differences between the
behavior of the fluctuations measured in a two-probe as compared to a
multi-probe geometry are discussed, and some recent results relevant to the
multi-probe case are presented. A recent hypothesis relating these
time-independent fluctuation effects to low-frequency noise in dirty metals
is reviewed, and a decisive experiment for testing the theory is proposed.
(43 Refs)
Location: Phys-Sci QC/176/A1/P517/1988
02800582 INSPEC Abstract Number: A87012811, B87006426
Title: Resonant tunneling through double barriers, perpendicular quantum
transport phenomena in superlattices, and their device applications
Author(s): Capasso, F.; Mohammed, K.; Cho, A.Y.
Author Affiliation: AT&T Bell Labs., Murray Hill, NJ, USA
Journal: IEEE Journal of Quantum Electronics vol.QE-22, no.9 p.
1853-69
Publication Date: Sept. 1986 Country of Publication: USA
Treatment: Bibliography (B); General, Review (G); Experimental (X)
Abstract: New results on the physics of tunneling in quantum-well
heterostructures and its device applications are discussed. Following a
general review of the field, resonant tunneling through double barriers is
investigated. Recent conflicting interpretations of this effect in terms of
a Fabry-Perot mechanism or sequential tunneling are reconciled via an
analysis of scattering. The role of symmetry is quantitatively analyzed and
two recently proposed resonant tunneling transistor structures are
discussed. Perpendicular transport in superlattices is discussed.
Experimental results on tunneling superlattice photoconductors based on
effective mass filtering are presented. Negative differential resistance
resulting from localization in a high electric field is discussed.
Sequential resonant tunneling in superlattices is reported. An analogy
between this phenomenon and paramagnetic spin resonance is shown. Tunable
infrared semiconductor lasers and wavelength-selective detectors based on
this effect are discussed. (54 Refs)
Title: Conductance oscillations periodic in the density of one-dimensional
electron gases
Author(s): Field, S.B.; Kastner, M.A.; Meirav, U.; Scott-Thomas, J.H.F.;
Antoniadis, D.A.; Smith, H.I.; Wind, S.J.
Author Affiliation: MIT, Cambridge, MA, USA
Journal: Physical Review B (Condensed Matter) vol.42, no.6 p.
3523-36
Publication Date: 15 Aug. 1990 Country of Publication: USA
Abstract: Results are reported of a detailed study of the conductance
oscillations in one-dimensional (1D) Si inversion layers. A comparison is
made with results for GaAs accumulation layers. The conductance oscillates
by as much as a factor of 100 and is accurately periodic in the number of
electrons per unit length. The period varies randomly from sample to
sample, and changes when a single sample is warmed to room temperature and
remeasured at low temperature. Multiple periods are often observed, and the
amplitude of the individual frequency components can be altered by moving
the electron gas from side to side with a transverse electric field. These
observations suggest that the period is determined by the distance between
charged defects near the 1D channel. Measurements of the temperature
dependence indicate that the oscillatory conductance reflects a periodic
energy for a thermally activated conductance mechanism as well as a
parallel oscillatory tunneling mechanism. The period of the conductance
oscillations is found to be surprisingly independent of magnetic field B.
However, the random modulation of the amplitude of the oscillations is
reduced by a B field normal to the semiconductor surface, as it is by
increasing temperature. (20 Refs)
XXCO JAP
XXBB J. Appl. Phys., Vol. 68, No. 11, 1 December 1990
Pages 5741 - 5749
XXTT Duality and fluxonics in superconducting devices
XXAU A. M. Kadin
XXLO Department of Electrical Engineering, University of Rochester, Rochester,
New York 14627
XXSD (Received 6 June 1990; accepted for publication 16 August 1990)
XXDA #TP T #YR 90 #XN 7460Ge #XN 8525-j #XN 7475+t
XXJN #54 426001 #56 US #80 07 #81 SUPERCONDUCTING DEVICES :T1; MAGNETIC FLUX
:Q1; MOTION; ELECTRIC CHARGES; DUALITY; QUANTIZATION; HIGH-TC SUPERCONDUCTORS;
XXAB The concept of electrical duality is reviewed, with a focus on the symmetry
between the motion of charge and the motion of magnetic flux. This approach is
especially illuminating for the case of a superconductor, in which flux is
quantized in units of Phi [sub 0]=h/2e. In a two-dimensional
superconductor, a quantized vortex or fluxon can be viewed as the dual of an
electron. Based on this analogy, new superconducting ``fluxonic'' device
concepts are proposed, including optical detectors and transistors. Finally, the
implications of this picture for low- and high-temperature superconductors are
evaluated.
Magnetization Curve at Zero Temperature for the Antiferromagnetic Heisenberg Linear Chain
R. B. Griffiths
Physical Review, Vol. 133, A768
Coulomb Blockade:
03873561 INSPEC Abstract Number: A91061557
Title: Current-voltage characteristic of double normal tunnel junctions
Author(s): Laikhtman, B.
Author Affiliation: IBM Res. Div., Thomas J. Watson Res. Center, Yorktown
Heights, NY, USA
Journal: Physical Review B (Condensed Matter) vol.43, no.4, pt.A p.
2731-4
Publication Date: 1 Feb. 1991 Country of Publication: USA
Abstract: The current-voltage characteristic of two tunnel injunctions in
series is evaluated under the conditions of the Coulomb blockade. With use
of the quasiclassical description suggested by Mullen et al. (1988) a
transport equation for this system is written down and solved, which allows
the author to give an analytical expression for the Coulomb staircase. The
tunnel current below the Coulomb threshold is evaluated to the second order
of the perturbation theory. (22 Refs)
Title: Frequency-locked turnstile device for single electrons
Author(s): Geerligs, L.J.; Anderegg, V.F.; Holweg, P.A.M.; Mooij, J.E.;
Pothier, H.; Esteve, D.; Urbina, C.; Devoret, M.H.
Author Affiliation: Dept. of Appl. Phys., Delft Univ. of Technol.,
Netherlands
Journal: Physical Review Letters vol.64, no.22 p.2691-4
Publication Date: 28 May 1990 Country of Publication: USA
Abstract: The authors have fabricated an array of ultrasmall tunnel
junctions which acts like a turnstile for single electrons. When
alternating voltage of frequency f is applied to a gate, one electron is
transferred per cycle through the device. This results in a current plateau
in the current-voltage characteristic at I=ef. The overall behavior of the
device is well explained by the theory of Coulomb blockade of electron
tunneling. The authors discuss the accuracy limitations of this device. (7
Refs)
Title: Theory of mesoscopic tunnel junctions: From shot noise to the
standard quantum limit
Author(s): Ueda, M.; Hatakenaka, N.
Author Affiliation: NTT Basic Res. Labs., Tokyo, Japan
Journal: Physical Review B (Condensed Matter) vol.43, no.6 p.
4975-87
Publication Date: 15 Feb. 1991 Country of Publication: USA
Abstract: The authors predict two distinct types of crossovers and
fundamental quantum-noise limits that single-electron-tunneling (SET)
statistics in an ultrasmall normal tunnel junction will exhibit as external
macroscopic conditions are changed. When the product of source voltage V
and electrostatic capacitance C of the junction is given, SET events
exhibit a crossover from random shot noise to Coulomb-regulated
oscillations as the ratio of source-to-tunnel resistance R/sub S//R/sub T/
becomes larger. This regularity, however, has a fundamental upper bound,
which the authors refer to as the standard quantum limit. It is shown that
the standard quantum limit does not originate from the current or from
thermal fluctuations but originates from the time-energy uncertainty
principle that is inherent in quantum-mechanical tunneling. In particular,
the time-energy uncertainty relationship is derived this being unique to
single-electron tunneling by Coulomb blockade. On the other hand, when the
ratio to source-to-tunnel resistance R/sub S//R/sub T/, is given, it is
found that the degree of randomness of SET oscillations decreases as the
product CV reduces to an optimum value above e/2, but that it rapidly
increases as the product further reduces towards e/2. Such an optimum value
is shown to emerge as a balancing point between an ordering force (arising
from Coulomb blockade) and a fluctuating force (caused by
quantum-mechanical tunneling). The optimum value is numerically evaluated
over a wide range of the ratio R/sub S//R/sub T/. The whole analysis
employs a semiclassical model but it is based on an exact, analytic
methodology. By so doing, a critical point is reached where the
semiclassical theory of Coulomb blockade manifestly breaks down. (26 Refs)
03923105 INSPEC Abstract Number: A91092948
Title: Charge quantization effects in networks of small capacitance tunnel
junctions
Author(s): Mooij, J.E.; Geerligs, L.J.
Author Affiliation: Dept. of Appl. Phys., Delft Univ. of Technol.,
Netherlands
Journal: Physica B vol.169 p.32-6
Publication Date: Feb. 1991 Country of Publication: Netherlands
Conference Title: Proceedings of the 19th International Conference on Low
Temperature Physics
Conference Date: 16-22 Aug. 1990 Conference Location: Brighton, UK
Abstract: Effects of charge quantization have been studied in tunnel
junctions with small capacitance. In the normal state the Coulomb blockade,
the modulation of conductance by a gate voltage and tunneling across
multiple junctions through virtual states are observed. A 'turnstile'
device has been developed that transmits exactly one electron in each cycle
of an AC-gate voltage. In 2D arrays a charge-anticharge pair unbinding
transition is discussed. In arrays of superconducting junctions a phase
transition occurs at zero temperature between insulating behavior for
high-resistance junctions and superconducting behavior for junction
resistances below 14 k Omega . (13 Refs)
Title: The charge-effect transistor
Author(s): Amman, M.; Mullen, K.; Ben-Jacob, E.
Author Affiliation: Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
Journal: Journal of Applied Physics vol.65, no.1 p.339-46
Publication Date: 1 Jan. 1989 Country of Publication: USA
Abstract: The authors present a theoretical study of the current-voltage
characteristic of a new transistor based upon the 'Coulomb blockade.' In
mesoscopic (submicron) tunnel junctions the flow of current can be blocked
by the electrostatic charging energy of a single electron. The
charge-effect transistor is composed of two mesoscopic tunnel junctions
connected in series with a gate terminal capacitively coupled to the
interjunction region. Such a device has been shown to lead to a Coulomb
staircase in the current-voltage characteristic when the gate voltage is
zero. The authors study the effect of the gate voltage on the current
through the device for various ranges of junction parameters. They study
junctions made from both normal metal and superconductors. They examine the
current noise at different operating points and find it comparable to, but
lower than, that in ordinary shot-noise devices. (35 Refs)
03478757 INSPEC Abstract Number: A89127149
03773254 INSPEC Abstract Number: A91003620
Title: Coulomb blockade on imaged mesoscopic lead grains
Author(s): Wan, J.-C.; McGreer, K.A.; Anand, N.; Nowak, E.; Goldman, A.M.
Author Affiliation: Sch. of Phys. & Astron. & Center for the Sci. &
Application of Superconductivity, Minnesota Univ., Minneapolis, MN, USA
Journal: Physical Review B (Condensed Matter) vol.42, no.9 p.5604-9
Publication Date: 1 Sept. 1990 Country of Publication: USA
Abstract: Low-temperature scanning-tunneling-microscope (STM) studies of
charging effects have been carried out on granular lead films. Well-defined
Coulomb-staircase and Coulomb-blockade I-V characteristics were frequently
observed. For the first time, the latter were observed in the tunneling
characteristics of grains imaged with scanning tunneling microscopy.
Capacitances (<10/sup -18/ F) calculated from the I-V characteristics are
compared to the values estimated from the STM images of these grains. In
addition to the charging effects, an anomalous nonlinearity in the
tunneling current was observed. (16 Refs)
03830279 INSPEC Abstract Number: A91036871
Title: Single-electron and oxide-impurity effects in junctions formed by a
cryogenic scanning tunneling microscope
Author(s): Wilkins, R.; Amman, M.; Ben-Jacob, E.; Jaklevic, R.C.
Author Affiliation: Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
Journal: Physical Review B (Condensed Matter) vol.42, no.13, pt.B
p.8698-701
Publication Date: 1 Nov. 1990 Country of Publication: USA
Abstract: The authors show that the I-V characteristics measured at 4 K
of single tunnel junctions between the tip of a scanning tunneling
microscope and a metallic sample are sensitive to the materials used. The
superconducting energy gap of lead is observed for tips without surface
oxides, but eliminated for tips with thick oxides. Probing bulk etched
tungsten, observation of the Coulomb staircase suggests capacitive effects
due to a small metallic-oxide impurity. This provides direct evidence that
such impurities can dominate junction response, sometimes imitating a
single-junction Coulomb blockade. (28 Refs)
03598662 INSPEC Abstract Number: A90055201
Title: Inelastic tunneling spectroscopy and single-electron tunneling in
an adjustable microscopic tunnel junction
Author(s): Gregory, S.
Author Affiliation: Bellcore, Red Bank, NJ, USA
Journal: Physical Review Letters vol.64, no.6 p.689-92
Publication Date: 5 Feb. 1990 Country of Publication: USA
Abstract: A remarkably stable microscopic tunnel junction can be made
with two crossed wires separated by a monolayer of adsorbed molecules.
Inelastic tunneling peaks of hydrocarbons are clearly resolved. A wide
Coulomb blockade of single-electron tunneling is observed, indicating that
stray capacitance does not influence the microscopic junction. (10 Refs)
Organic
NOTE: the primary articles on organic metals (1D systems: charge transfer salts and polymers) are reprinted in the book by Yu Lu, or are in the NATO proceedings books; these are on the book reference list.
XXBB Rev. Mod. Phys., Vol. 60, No. 3, July 1988
Pages 781 - 850
XXTT Solitons in conducting polymers
XXAU A. J. Heeger
XXLO Department of Physics and Institute for Polymers and Organic Solids,
University of California at Santa Barbara, Santa Barbara, California 93106
XXAU S. Kivelson
XXLO Department of Physics, SUNY at Stony Brook, Stony Brook, New York
11794-3800
XXAU J. R. Schrieffer
XXLO Department of Physics and Institute forTheoretical Physics, University of
California at Santa Barbara, Santa Barbara, California 93106
XXAU W.-P. Su
XXLO Department of Physics, University of Houston, Houston, Texas 77004
XXDA #TP R #YR 88 #XN 7220Ht #XN 7220Jv #XN 7280Le #XN 7138+i
XXJN #56 US #80 11 #81 SOLITONS :Q1,Q2; POLYACETYLENES :T1; POLYMERS; REVIEWS;
ELECTRIC CONDUCTIVITY :Q1,Q2; CHARGE CARRIERS; HAMILTONIANS; POLARONS; GROUND
00774534 INSPEC Abstract Number: A75045613
Title: Linear polyene electronic structure and spectroscopy
Author(s): Hudson, B.; Kohler, B.
Author Affiliation: Stanford Univ., CA, USA
Book Title: Annual review of physical chemistry. vol.25 p.437-60
Editor(s): Eyring, H.
Publisher: Annual Reviews, Palo Alto, CA, USA
Publication Date: 1974 Country of Publication: USA viii+566 pp.
Abstract: The authors present a state-of-the-art review of polyene
spectroscopy. It is shown that the presence of an excited singlet state at
an energy below that of the /sup 1/B/sub u/ state reconciles the apparently
anomalous fluorescence of polyenes with the behaviour of other molecules,
although this is in contradiction to the results of LCAO calculations.
Calculations involving doubly excited configurations in the CI treatment
have had more success in accounting for this state, but the theory is by no
means complete. On the experimental side, it is shown that low temperature,
mixed crystal experiments coupled to vibrational spectroscopy is the most
promising approach to polyene spectroscopy. (1766 Refs)
Nanoclusters
XXCO RMP
XXBB Rev. Mod. Phys., Vol. 58, No. 3, July 1986
Pages 533 - 606
XXTT Quantum size effects in metal particles
XXAU W. P. Halperin
XXLO Department of Physics, Northwestern University, Evanston, Illinois 60201
XXDA #TP R #YR 86 #XN 3640+d
XXJN #56 US #80 15 #81 energy levels; magnetic susceptibility; particle size;
specific heat; nuclear magnetic resonance; knight shift; particles;
size effect :q2; l-s coupling; reviews; atomic clusters :q1,T2; metals :T1;
evaporation; absorption spectra; electronic structure :q2;
XXAB The subject of small metallic particle properties is outlined with emphasis
on quantum electronic effects. The theoretical background for interpretation of
experiments is discussed beginning with the work of Kubo. More recent
amendments to this have been included, taking into account the techniques of
random matrix theory and effects of the spin-orbit interaction. A general
review of experimental work is presented in order to permit a comprehensive
evaluation of current understanding of the quantum size effect on the
electronic spectrum. This survey includes magnetic susceptibility, nuclear
magnetic resonance, electron spin resonance, heat capacity, optical, and
infrared absorption measurements. These are discussed in many instances from
the point of view of there being competing size effects arising from a reduced
volume contrasted with those from the surface. A number of stimulating and
provocative results have led to the development of new areas of research
involving metallic clusters such as cluster beam techniques, far-infrared
absorption by particle clusters, adsorbate NMR, and particle-matrix composites.
Although there is little question that the experiments themselves indicate the
existence of quantum effects, there are as yet, insufficient results to test
the theoretical predictions for electron-level distribution functions based on
fundamental symmetries of the electron Hamiltonian. A new suggestion for
measurement of the electron-level correlation function is made using the
magnetic field dependence of the NMR Knight shift. Particle preparation methods
are also reviewed with commentary on the problems and advantages of these
techniques for investigation of quantum electronic effects.
ORDERED ILL COPY:
03567213 INSPEC Abstract Number: A90036018
Title: Synthesis, stabilization, and electronic structure of quantum semiconductor nanoclusters
Author(s): Steigerwald, M.L.; Brus, L.E.
Author Affiliation: AT&T Bell Labs., Murray Hill, NJ, USA
Book Title: Annual review of material science. Vol.19 p.471-95
Editor(s): Huggins, R.A.; Giordmaine, J.A.; Wachtman, J.B.
Publisher: Annual Reviews, Palo Alto, CA, USA
Publication Date: 1989 Country of Publication: USA viii+562 pp.
Abstract: The authors review the developing synthesis schemes for making
size-selected, stabilized semiconductor clusters. They also briefly outline
the molecular orbital theory of size dependent band structure development
in order to show how these clusters differ from bulk materials. (31 Refs)
03482461 INSPEC Abstract Number: A89128089
Title: GaAs clusters in the quantum size regime: growth on high surface
area silica by molecular beam epitaxy
Author(s): Sandroff, C.J.; Harbison, J.P.; Ramesh, R.; Andrejco, M.J.;
Hegde, M.S.; Hwang, D.M.; Chang, C.C.; Vogel, E.M.
Author Affiliation: Bellcore, Red Bank, NJ, USA
Journal: Science vol.245, no.4916 p.391-3
Abstract: Molecular beam epitaxy has been used to grow microcrystalline
clusters of gallium arsenide (GaAs) in the size range from 2.5 to 60
nanometers on high-purity, amorphous silica supports. High-resolution
transmission electron microscopy reveals that clusters as small as 3.5
nanometers have good crystalline order with a lattice constant equal to
that of bulk GaAs. Study of the microcrystallite surfaces by X-ray
photoelectron spectroscopy shows that they are covered with a shell (1.0 to
1.5 nanometers thick) of native oxides of gallium and arsenic (Ga/sub
2/O/sub 3/ and As/sub 2/O/sub 3/), whose presence could explain the low
luminescence efficiency of the clusters. Optical absorption spectra of the
supported GaAs are consistent with the blue-shifted band edge expected for
semiconductor microcrystallites in the quantum size regime. (25 Refs)
02974814 INSPEC Abstract Number: A87118979
Title: Theory of the linear and nonlinear optical properties of
semiconductor microcrystallites
Author(s): Schmitt-Rink, S.; Miller, D.A.B.; Chemla, D.S.
Author Affiliation: AT&T Bell Labs. Murray Hill, NJ, USA
Journal: Physical Review B (Condensed Matter) vol.35, no.15 p.
8113-25
Publication Date: 15 May 1987 Country of Publication: USA
Abstract: The authors analyze theoretically the optical properties of
ideal semiconductor crystallites so small that they show quantum
confinement in all three dimensions (quantum dots (QD's)). In the limit of
a QD much smaller than the bulk exciton size, the linear spectrum will be a
series of lines, and the authors consider the phonon broadening of these
lines. The lowest interband transition will saturate like a two-level
system, without exchange and Coulomb screening. Depending on the
broadening, the absorption and the changes in absorption and refractive
index resulting from saturation can become very large, and the local-field
effects can become so strong as to give optical bistability without
external feedback. The small QD limit is more readily achieved with
narrow-band-gap semiconductors. (50 Refs)
Title: Biosysthesis of cadmium sulphide quantum semiconductor crystallites
Author(s): Dameron, C.T.; Reese, R.N.; Mehra, R.K.; Kortan, A.R.;
Carroll, P.J.; Steigerwald, M.L.; Brus, L.E.; Winge, D.R.
Author Affiliation: University of Utah Medical Center, Salt Lake City,
Utah, USA
Journal: Nature vol.338 p. 596-597
Publication Date: 13 Apr. 1989
Hall Effect
XXBB Rev. Mod. Phys., Vol. 59, No. 3, July 1987
Pages 781 - 824
XXTT Integral quantum Hall effect for nonspecialists
XXAU D. R. Yennie
XXLO Laboratory of Nuclear Studies, Cornell University, Ithaca, New York 14853,
Institute for Theoretical Physics, University of California, Santa Barbara,
California 93106 and Stanford Linear Accelerator Center, Stanford, California
94305
XXDA #TP R #YR 87 #XN 7215Gd #XN 7220My
XXJN #52 P #54 656002 #56 US #80 08 #81 HALL EFFECT :T1; THREE-DIMENSIONAL
CALCULATIONS; QUANTIZATION :Q1; PERTURBATION THEORY; REVIEWS; MATHEMATICAL
MODELS; #83 QUANTUM HALL EFFECT :T2; REVIEWS :Q2;
XXAB An attempt is made to develop a description of the multielectron quantum
state responsible for the integral quantum Hall effect. One goal is to provide
intuitive support for the very powerful and general argument of Laughlin that
the theoretical relationship is insensitive to complicating details in the
interior of the sample. The model the author uses is somewhat more realistic
than heretofore in that it is three dimensional, does not ignore the atomic
structure of the bulk matter, and does not use an effective-mass approximation.
In order to treat the problem quantum mechanically, the complete system,
including circuitry external to the system of interest, is replaced by a model
closed system consisting of a finite number of electrons. In this model, states
with a finite Hall current and voltage are metastable against decay
caused by interactions outside the model, such as those with bulk matter
excitations. Such states describe the true situation well only in the
conductivity plateaus; between plateaus, there would be current flow between
the Hall voltage probes corresponding to decaying states. Experimental
constraints replace this transverse current by a voltage drop along the
direction of current flow. The interactions between the electrons are expressed
in terms of a self-consistent potential which gives an independent-particle
description as a starting point, and residual interactions which are treated by
perturbation theory. The self-consistent potential is found to be important in
understanding the properties of the quantum state of the system, such as the
existence of the plateaus in conductivity and how the electrons in the
(effective) two-dimensional region come to equilibrium with the different Fermi
levels in the voltage probes. To all finite orders of perturbation theory, the
residual interactions are found not to alter the quantized Hall conductivity.
Author: NATO Advanced Study Institute on Physics and Applications of
Quantum Wells and Superlattices (1987 : Erice, Sicily)
Title: Physics and applications of quantum wells and superlattices /
edited by E.E. Mendez and K. von Klitzing.
Imprint: New York : Plenum Press, c1987.
Series: NATO ASI series. Series B, Physics ; v. 170.
Location: Phys-Sci QC/611.8/S86/N38/1987
H.L. Stormer. Images of the Fractional Quantum Hall Effect, in:
Title: Heterojunctions and semiconductor superlattices : proceedings
of the winter school, Les Houches, France, March 12-21, 1985 /
editors, G. Allan ... [et al.].
Imprint: Berlin ; New York : Springer-Verlag, c1986.
Location: Phys-Sci QC/611.6/J85/H48/1986
Popular Articles:
02749969 INSPEC Abstract Number: A86113158
Title: The quantized Hall effect
Author(s): Halperin, B.I.
Journal: Scientific American vol.254, no.4 p.40-8
Publication Date: April 1986 Country of Publication: USA
Abstract: This variation on a classical phenomenon makes it possible,
even in an irregular sample, to measure fundamental constants with an
accuracy rivaling that of the most precise measurements yet made. (0 Refs)
Descriptors: quantum Hall effect
Identifiers: quantized Hall effect
Class Codes: A7220M (Galvanomagnetic and other magnetotransport effects);
A7340L (Semiconductor-to-semiconductor contacts, p-n junctions, and
heterojunctions)
02905326 INSPEC Abstract Number: A87076968, B87037860
Title: Ballistic electrons in semiconductors
Author(s): Heiblum, M.; Eastman, L.F.
Journal: Scientific American vol.256, no.2 p.64-73
Publication Date: Feb. 1987 Country of Publication: USA
Abstract: Devices in which electrons carry current without being
scattered promise to be much faster than present-day components. They also
allow close study of the electron's quantum-mechanical properties. (0
Refs)
03275704 INSPEC Abstract Number: B89002304
Title: The quantum-effect device: tomorrow's transistor?
Author(s): Bate, R.T.
Journal: Scientific American vol.258, no.3 p.78-82
Publication Date: March 1988 Country of Publication: USA
Abstract: The components of ordinary integrated circuits can be made only
so small before disruptive effects impair their function. A new species of
semiconductor device based on an AlGaAs-GaAs quantum dot structure could
take over. (0 Refs)
03414781 INSPEC Abstract Number: A89084113
Title: Quantum interference and the Aharonov-Bohm effect
Author(s): Imry, Y.; Webb, R.A.
Author Affiliation: Weizmann Inst. of Sci., Rehovoth, Israel
Journal: Scientific American vol.260, no.4 p.36-42
Publication Date: April 1989 Country of Publication: USA
Abstract: These counterintuitive effects play important roles in the
theory of electromagnetic interactions, in solid-state physics and possibly
in the development of new microelectronic devices. (4 Refs)
03935114 INSPEC Abstract Number: A91098469, B91049617
Title: Diminishing dimensions
Author(s): Corcoran, E.
Journal: Scientific American vol.263, no.5 p.122-6,128-31
Publication Date: Nov. 1990 Country of Publication: USA
Abstract: Materials scientists are manipulating matter in layers just an
atom thick to form materials that will be the building blocks of complex
electronic and optical devices. The key issue facing researchers snow, is
how to fashion these novel materials-semiconductor quantum wells, wires and
dots-into working devices. The promise is a new generation of computers and
lasers. (0 Refs)
00657416 INSPEC Abstract Number: A74052309
Title: Inorganic polymers
Author(s): Allcock, H.R.
Journal: Scientific American vol.230, no.3 p.66-74
Publication Date: March 1974 Country of Publication: USA
Abstract: Most commercial polymers are long-chain molecules with carbon
atoms in their backbone. New families of polymers with backbones of atoms
other than carbon are yielding materials with unusual characteristics.
03264829 INSPEC Abstract Number: A89002367
Title: Plastics that conduct electricity
Author(s): Kaner, R.B.; MacDiarmid, A.G.
Journal: Scientific American vol.258, no.2 p.60-5
Publication Date: Feb. 1988 Country of Publication: USA
Abstract: Discusses the discovery, production and uses of doped polymers
which conduct electricity. The dopants are ionic triplets and the plastic's
conductivity is increased a billion times. A lightweight battery is one of
many applications. (0 Refs)
01470262 INSPEC Abstract Number: A80024887
Title: Linear-chain conductors
Author(s): Epstein, A.J.; Miller, J.S.
Journal: Scientific American vol.241, no.4 p.48-57
Publication Date: Oct. 1979 Country of Publication: USA
Abstract: A few materials with a linear or columnar architecture conduct
electricity well only along a single axis. The one-dimensional organization
of such a material shapes its electronic properties. (0 Refs)
Title: Silicon Lights Up: Researchers tease silicon into emitting light.
Journal: Scientific American vol.265, no.1 p.108-9
Publication Date: July 1991 Country of Publication: USA
Title: Fullerines
Journal: Scientific American vol. 265, no.4 p.54-63
Publication Date: Oct. 1991 Country of Publication: USA
Popular Short Blurbs:
page
Laying on of atoms: Quantum well wires. Science News 135, 69
Growing and carving micro-laser forests (Harbison). Science News 136, 68
Semiconductor studies get a rise from yeast. Science News 136, 231
Forging superstrong conducting polymers. Science News 136, 356
Making chicken wire of molecular size (buckyballs). Science News 136 406
Making new materials molecule by molecule. Science News 137, 166
Conductive polymers get closer to home. Science News 137, 230
Salty superconductor champ (Organic ET at 12.8K). Science News 138, 167
Atom clusters act bigger than their britches. Science News 138, 279
Buckeyballs get their first major physical. Science News 138, 357
Light induced current in a quantum well. Science News 138, 47
Profile emerges of well-rounded molecule (buckyballs).Science News 138 197
Totally organic electronics. Science News 138, 207
Crystal growers seek bacterial know-how... Science News 138 382
Disorderly Light-conductance fluctuations vs. classical optics. Science News 139 248
Progress in desingning magnetic polymers. Science News 139 254
Hot time for polymer magnet, Scinece News 140, 15
STM scientists storng-arm silicon atoms. Science News 140 21
Teflon grid brings order to thin films, Scinece News 140 71
Ploymer shifts light in two directions, Science News 140, 77
Hot times for buckyball superconductors. Science News 140, 84
Silicon now snines with optical potential. Science News 140, 135
Buckyballs still charm. Science News 140, 120
Pushing lasers on a chip into the blue, Science News 140, 183