Oxide Growth on Silicon
Oxide films are grown on
silicon wafers to provide insulating layers in
semiconductor devices. In this project, performed in the
Thayer Microengineering
Laboratory ,
oxide films will be grown on
silicon by both wet and dry oxidation. The film thickness will be
measured as a function of annealing time at a veriety of temperatures
by both ellipsometry, and optionally using a profilometer and/or a
scanning electron microscope. A good project will derive a
relationship between oxide thickness, annealing time and annealing temperature.
Silicon wafers are processed using an
RCA clean
and oxidized in a
diffusion furnace
or a
rapid thermal processor
(RTP) in either flowing oxygen gas or
water vapor.
Oxide thickness is measured with a dual wavelength
ellipsometer
and/or by etching and using a stylus profilometer. Surfaces can also be
examined with a
Scanning Electron Microscope (SEM).
Christopher.G.Levey@dartmouth.edu