Grain Growth in Aluminum Metallization Lines

Aluminum metallization layers are used on many semiconducting devices. In this project, aluminum lines approximately 2 microns wide will be laid down on a silicon oxide substrate using the facilities in the Thayer Microengineering Laboratory. The structure of the films in as-deposited condition and after various heat treatments will be examined using scanning electron microscopy. A good project will determine the evolution of the microstructure as a function of time at a particular annealing temperature. The structure and rate of grain growth in the lines produced from Al-4 wt.% Cu and Al-1 wt. % Si could also be studied and compared to grain growth in pure aluminum.

Christopher.G.Levey@dartmouth.edu