Reference for RCA clean technique (by an originator):
Handbook of Semiconductor Wafer Cleaning Technology, Werner Kern, Noyes Publications, Park Ridge NJ, 1993.
Also: W. Kern and D. Puotinen, RCA Review 31:187-206 (1970)
Clean Procedure (see figure below): A. Organic removal: 5 minutes in SC-1 solution (also known as standard clean 1, Huang A, and and APM for Ammonia/peroxide mix) of 4:1:1 DI:H2O2:NH4OH solution at 75C to remove organics and particles. B. Cascade Rinse in DI water. C. Oxide removal: 30 seconds in DHF solution (for dilute hydrofluoric acid) of 50:1 DI:HF solution to remove oxide and metal contamination. D. Cascade Rinse in DI water. E. Metal removal: 5 minutes in SC-2 solution (also known as standard clean 2, Huang B, and HPM for Hydrochloric/peroxide mix) of 4:1:1 DI:H2O2:HCl solution at 75C to remove metals and for a clean thin oxide. F. Cascade Rinse in DI water. G. Blow dry with UHP grade nitrogen gas.Safety precautions:
You must be trained to use the RCA clean, and you must wear:
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