Increase the percentage of electrons that cause ionizing collisions by utilizing a magnetic fields to help to confine electrons near the target.
- Deposition pressure : 10^-3 to 0.1 Pa ( 10^-5 to 10^-3 torr)
- Deposition rate : 0.2 to 2 E-6 m/min
- Depostion temperature : 100 to 150 C
- Very high deposition rates, low deposition pressure, low substrate temperature, can be scaled up, so commonly used for industrial production
- More complex than planar diode systems