Tunnel Epitaxy

This new technique is a variation on lateral solid phase epitaxy in which the growth of the epitaxial layer proceeds through a "tunnel" in the oxide.

To fabricate this structure, it is necessary to:

(Ogura, 1126)

Investigators at NEC have fabricated SOI layers in this manner which they claim have excellent crystallinity and electrical characteristics suitable for device fabrication. Other possible applications for this technology could be in vertical transistors, interconnection fabrication, and micromachining.

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