Lateral Solid Phase Epitaxy
Lateral solid phase epitaxy is a method for fabricating silicon on insulator in which a silicon layer is epitaxially grown over a layer of oxide. The process follows these basic steps:
(Kurusawa et. al., 80)
- Start with standard Si wafer.
- Grow oxide layer.
- Etch holes through to substrate
- Deposit Si epitaxially until SiO2 layer is covered to desired depth.
For best results, the substrate should be aligned such that the direction of maximum growth is parallel to the surface.
Advantage: good crystalline quality of epitaxial layer.
Disadvantage: difficult to control thickness.
(Ogura et. al., 1125)
Back to Outline