Lateral Solid Phase Epitaxy

Lateral solid phase epitaxy is a method for fabricating silicon on insulator in which a silicon layer is epitaxially grown over a layer of oxide. The process follows these basic steps:

(Kurusawa et. al., 80)

For best results, the substrate should be aligned such that the direction of maximum growth is parallel to the surface.

Advantage: good crystalline quality of epitaxial layer.

Disadvantage: difficult to control thickness.

(Ogura et. al., 1125)

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